Charge and Spin Transport in Disordered Graphene-Based Materials

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mea...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Van Tuan, Dinh (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:Springer Theses, Recognizing Outstanding Ph.D. Research,
Temas:
Nanoscience.
Optical materials.
Surfaces (Technology).
Thin films.
Nanophysics.
Optical Materials.
Surfaces, Interfaces and Thin Film.
Acceso en línea:Texto Completo

MARC

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245 1 0 |a Charge and Spin Transport in Disordered Graphene-Based Materials  |h [electronic resource] /  |c by Dinh Van Tuan. 
250 |a 1st ed. 2016. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2016. 
300 |a XVI, 153 p.  |b online resource. 
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505 0 |a Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions. 
520 |a This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter. 
650 0 |a Nanoscience. 
650 0 |a Optical materials. 
650 0 |a Surfaces (Technology). 
650 0 |a Thin films. 
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650 2 4 |a Optical Materials. 
650 2 4 |a Surfaces, Interfaces and Thin Film. 
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950 |a Physics and Astronomy (R0) (SpringerNature-43715) 

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