Dispersion Relations in Heavily-Doped Nanostructures

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic qua...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Ghatak, Kamakhya Prasad (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:Springer Tracts in Modern Physics, 265
Temas:
Semiconductors.
Nanotechnology.
Telecommunication.
Nanoscience.
Condensed matter.
Microwaves, RF Engineering and Optical Communications.
Nanophysics.
Condensed Matter Physics.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors
  • The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors
  • The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors
  • The DR in doping superlattices of HD Non-Parabolic Semiconductors
  • The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.

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