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150805s2015 sz | s |||| 0|eng d |
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|a 9783319152905
|9 978-3-319-15290-5
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|a 10.1007/978-3-319-15290-5
|2 doi
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|a Charge-Trapping Non-Volatile Memories
|h [electronic resource] :
|b Volume 1 - Basic and Advanced Devices /
|c edited by Panagiotis Dimitrakis.
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|a 1st ed. 2015.
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|a Cham :
|b Springer International Publishing :
|b Imprint: Springer,
|c 2015.
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|a IX, 211 p. 181 illus., 146 illus. in color.
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
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|a online resource
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|a text file
|b PDF
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|a Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.
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|a This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
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|a Nanotechnology.
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|a Electronic circuits.
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|a Electronics.
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|a Computer storage devices.
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|a Memory management (Computer science).
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|a Nanotechnology.
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|a Electronic Circuits and Systems.
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|a Electronics and Microelectronics, Instrumentation.
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|a Computer Memory Structure.
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|a Dimitrakis, Panagiotis.
|e editor.
|4 edt
|4 http://id.loc.gov/vocabulary/relators/edt
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|a SpringerLink (Online service)
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|t Springer Nature eBook
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|i Printed edition:
|z 9783319152899
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|i Printed edition:
|z 9783319152912
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|i Printed edition:
|z 9783319350479
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|u https://doi.uam.elogim.com/10.1007/978-3-319-15290-5
|z Texto Completo
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|a ZDB-2-CMS
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|a ZDB-2-SXC
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|a Chemistry and Materials Science (SpringerNature-11644)
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|a Chemistry and Material Science (R0) (SpringerNature-43709)
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