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On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Cui, Qiang (Autor), Liou, Juin J. (Autor), Hajjar, Jean-Jacques (Autor), Salcedo, Javier (Autor), Zhou, Yuanzhong (Autor), Srivatsan, Parthasarathy (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2015.
Edición:1st ed. 2015.
Temas:
Acceso en línea:Texto Completo

MARC

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100 1 |a Cui, Qiang.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
245 1 0 |a On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits  |h [electronic resource] /  |c by Qiang Cui, Juin J. Liou, Jean-Jacques Hajjar, Javier Salcedo, Yuanzhong Zhou, Parthasarathy Srivatsan. 
250 |a 1st ed. 2015. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2015. 
300 |a XVII, 86 p. 59 illus., 42 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Basics in ESD Protection of Radio Frequency Integrated Circuits -- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process -- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process -- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process -- Conclusion. 
520 |a This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety level, while maximizing RF performance. Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies; Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS); Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance. 
650 0 |a Electronic circuits. 
650 0 |a Electronics. 
650 1 4 |a Electronic Circuits and Systems. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
700 1 |a Liou, Juin J.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
700 1 |a Hajjar, Jean-Jacques.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
700 1 |a Salcedo, Javier.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
700 1 |a Zhou, Yuanzhong.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
700 1 |a Srivatsan, Parthasarathy.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer Nature eBook 
776 0 8 |i Printed edition:  |z 9783319108186 
776 0 8 |i Printed edition:  |z 9783319108209 
776 0 8 |i Printed edition:  |z 9783319358246 
856 4 0 |u https://doi.uam.elogim.com/10.1007/978-3-319-10819-3  |z Texto Completo 
912 |a ZDB-2-ENG 
912 |a ZDB-2-SXE 
950 |a Engineering (SpringerNature-11647) 
950 |a Engineering (R0) (SpringerNature-43712)