Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Scalise, Emilio (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:Springer Theses, Recognizing Outstanding Ph.D. Research,
Temas:
Semiconductors.
Optical materials.
Mathematical physics.
Electronic circuits.
Surfaces (Physics).
Optical Materials.
Theoretical, Mathematical and Computational Physics.
Electronic Circuits and Systems.
Surface and Interface and Thin Film.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Introduction
  • Theoretical Methods
  • First-Principles Modelling of Vibrational Modes in Defective Oxides
  • Vibrational Properties of Silicene and Germanene
  • Interaction of Silicene with Non-Metallic Layered Templates
  • Conclusions and Perspectives
  • Appendix for Experimental Techniques.

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