Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /
Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
Clasificación: | Libro Electrónico |
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Autor principal: | Scalise, Emilio (Autor) |
Autor Corporativo: | SpringerLink (Online service) |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
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Edición: | 1st ed. 2014. |
Colección: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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Temas: | |
Acceso en línea: | Texto Completo |
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