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Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /
Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
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| Formato: | Electrónico eBook |
| Idioma: | Inglés |
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Cham :
Springer International Publishing : Imprint: Springer,
2014.
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| Edición: | 1st ed. 2014. |
| Colección: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Acceso en línea: | Texto Completo |