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The Thermoballistic Transport Model A Novel Approach to Charge Carrier Transport in Semiconductors /

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Lipperheide, Reinhard (Autor), Wille, Uwe (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:Springer Tracts in Modern Physics, 259
Temas:
Acceso en línea:Texto Completo

MARC

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245 1 4 |a The Thermoballistic Transport Model  |h [electronic resource] :  |b A Novel Approach to Charge Carrier Transport in Semiconductors /  |c by Reinhard Lipperheide, Uwe Wille. 
250 |a 1st ed. 2014. 
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300 |a XI, 150 p. 7 illus.  |b online resource. 
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490 1 |a Springer Tracts in Modern Physics,  |x 1615-0430 ;  |v 259 
505 0 |a Introduction -- Drift-Diffusion and Ballistic Transport -- Prototype Thermoballistic Model -- Thermoballistic Approach: Concept -- Thermoballistic Approach: Implementation -- Examples -- Summary and Outlook. 
520 |a The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail, and specific examples of interest to current research in semiconductor physics and spintronics are worked out. 
650 0 |a Semiconductors. 
650 0 |a Condensed matter. 
650 0 |a Optical materials. 
650 0 |a Nanoscience. 
650 1 4 |a Semiconductors. 
650 2 4 |a Condensed Matter Physics. 
650 2 4 |a Optical Materials. 
650 2 4 |a Nanophysics. 
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830 0 |a Springer Tracts in Modern Physics,  |x 1615-0430 ;  |v 259 
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