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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Srivastava, Viranjay M. (Autor), Singh, Ghanshyam (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:Analog Circuits and Signal Processing, 122
Temas:
Acceso en línea:Texto Completo

MARC

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245 1 0 |a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch  |h [electronic resource] /  |c by Viranjay M. Srivastava, Ghanshyam Singh. 
250 |a 1st ed. 2014. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2014. 
300 |a XV, 199 p. 55 illus., 45 illus. in color.  |b online resource. 
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490 1 |a Analog Circuits and Signal Processing,  |x 2197-1854 ;  |v 122 
505 0 |a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. 
520 |a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches. 
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650 2 4 |a Semiconductors. 
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