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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
|
| Edición: | 1st ed. 2014. |
| Colección: | Analog Circuits and Signal Processing,
122 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
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| 001 | 978-3-319-01165-3 | ||
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| 100 | 1 | |a Srivastava, Viranjay M. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |h [electronic resource] / |c by Viranjay M. Srivastava, Ghanshyam Singh. |
| 250 | |a 1st ed. 2014. | ||
| 264 | 1 | |a Cham : |b Springer International Publishing : |b Imprint: Springer, |c 2014. | |
| 300 | |a XV, 199 p. 55 illus., 45 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
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| 490 | 1 | |a Analog Circuits and Signal Processing, |x 2197-1854 ; |v 122 | |
| 505 | 0 | |a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. | |
| 520 | |a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches. | ||
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Telecommunication. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 1 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Communications Engineering, Networks. |
| 650 | 2 | 4 | |a Semiconductors. |
| 700 | 1 | |a Singh, Ghanshyam. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783319011660 |
| 776 | 0 | 8 | |i Printed edition: |z 9783319011646 |
| 776 | 0 | 8 | |i Printed edition: |z 9783319345352 |
| 830 | 0 | |a Analog Circuits and Signal Processing, |x 2197-1854 ; |v 122 | |
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| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||