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Atomic Layer Deposition for Semiconductors
Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discuss...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, NY :
Springer US : Imprint: Springer,
2014.
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| Edición: | 1st ed. 2014. |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-1-4614-8054-9 | ||
| 003 | DE-He213 | ||
| 005 | 20220115191211.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 131018s2014 xxu| s |||| 0|eng d | ||
| 020 | |a 9781461480549 |9 978-1-4614-8054-9 | ||
| 024 | 7 | |a 10.1007/978-1-4614-8054-9 |2 doi | |
| 050 | 4 | |a QD551-578 | |
| 072 | 7 | |a PNRH |2 bicssc | |
| 072 | 7 | |a SCI013050 |2 bisacsh | |
| 072 | 7 | |a PNRH |2 thema | |
| 082 | 0 | 4 | |a 541.37 |2 23 |
| 245 | 1 | 0 | |a Atomic Layer Deposition for Semiconductors |h [electronic resource] / |c edited by Cheol Seong Hwang. |
| 250 | |a 1st ed. 2014. | ||
| 264 | 1 | |a New York, NY : |b Springer US : |b Imprint: Springer, |c 2014. | |
| 300 | |a X, 263 p. 170 illus., 81 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines. | |
| 520 | |a Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device. | ||
| 650 | 0 | |a Electrochemistry. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Computer storage devices. | |
| 650 | 0 | |a Memory management (Computer science). | |
| 650 | 0 | |a Electric power production. | |
| 650 | 0 | |a Electronics. | |
| 650 | 1 | 4 | |a Electrochemistry. |
| 650 | 2 | 4 | |a Semiconductors. |
| 650 | 2 | 4 | |a Computer Memory Structure. |
| 650 | 2 | 4 | |a Electrical Power Engineering. |
| 650 | 2 | 4 | |a Mechanical Power Engineering. |
| 650 | 2 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 700 | 1 | |a Hwang, Cheol Seong. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9781461480532 |
| 776 | 0 | 8 | |i Printed edition: |z 9781461480556 |
| 776 | 0 | 8 | |i Printed edition: |z 9781489979438 |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-1-4614-8054-9 |z Texto Completo |
| 912 | |a ZDB-2-CMS | ||
| 912 | |a ZDB-2-SXC | ||
| 950 | |a Chemistry and Materials Science (SpringerNature-11644) | ||
| 950 | |a Chemistry and Material Science (R0) (SpringerNature-43709) | ||