Fundamentals of Nanoscaled Field Effect Transistors

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Chaudhry, Amit (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York, NY : Springer New York : Imprint: Springer, 2013.
Edición:1st ed. 2013.
Temas:
Electronics.
Electronic circuits.
Nanoscience.
Optical materials.
Electronics and Microelectronics, Instrumentation.
Electronic Circuits and Systems.
Nanophysics.
Optical Materials.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Scaling of a MOS Transistor
  • Nanoscale Effects- Gate Oxide Leakage Currents
  • Nanoscale Effects- Inversion Layer Quantization
  • Dielectrics for Nanoelectronics
  • Germanium Technology
  • Biaxial s-Si Technology
  • Uniaxial s-Si Technology
  • Alternate MOS Structures
  • Graphene Technology.

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