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Fundamentals of Nanoscaled Field Effect Transistors
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
|
| Edición: | 1st ed. 2013. |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-1-4614-6822-6 | ||
| 003 | DE-He213 | ||
| 005 | 20220116102258.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 130423s2013 xxu| s |||| 0|eng d | ||
| 020 | |a 9781461468226 |9 978-1-4614-6822-6 | ||
| 024 | 7 | |a 10.1007/978-1-4614-6822-6 |2 doi | |
| 050 | 4 | |a TK7800-8360 | |
| 072 | 7 | |a TJF |2 bicssc | |
| 072 | 7 | |a TEC008000 |2 bisacsh | |
| 072 | 7 | |a TJF |2 thema | |
| 082 | 0 | 4 | |a 621.381 |2 23 |
| 100 | 1 | |a Chaudhry, Amit. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Fundamentals of Nanoscaled Field Effect Transistors |h [electronic resource] / |c by Amit Chaudhry. |
| 250 | |a 1st ed. 2013. | ||
| 264 | 1 | |a New York, NY : |b Springer New York : |b Imprint: Springer, |c 2013. | |
| 300 | |a XIV, 201 p. 121 illus., 102 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology. | |
| 520 | |a Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics. | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Nanoscience. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 1 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Nanophysics. |
| 650 | 2 | 4 | |a Optical Materials. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9781461468233 |
| 776 | 0 | 8 | |i Printed edition: |z 9781461468219 |
| 776 | 0 | 8 | |i Printed edition: |z 9781493944828 |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-1-4614-6822-6 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||