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Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
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| Edición: | 1st ed. 2013. |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Introduction
- Variability in Nanometer Technologies and Impact on SRAM
- Variarion-Tolerant SRAM Write and Read Assist Techniques
- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control
- A Methodology for Statistical Estimation of Read Access Yield in SRAMs
- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction.