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Fundamentals of III-V Semiconductor MOSFETs
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a r...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, NY :
Springer US : Imprint: Springer,
2010.
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| Edición: | 1st ed. 2010. |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Non-Silicon MOSFET Technology: A Long Time Coming
- Properties and Trade-Offs of Compound Semiconductor MOSFETs
- Device Physics and Performance Potential of III-V Field-Effect Transistors
- Theory of HfO2-Based High-k Dielectric Gate Stacks
- Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors
- Interfacial Chemistry of Oxides on III-V Compound Semiconductors
- Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model
- Materials and Technologies for III-V MOSFETs
- InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS
- Sub-100 nm Gate III-V MOSFET for Digital Applications
- Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology
- p-type Channel Field-Effect Transistors
- Insulated Gate Nitride-Based Field Effect Transistors
- Technology/Circuit Co-Design for III-V FETs.