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Copper Interconnect Technology
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began t...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, NY :
Springer New York : Imprint: Springer,
2009.
|
| Edición: | 1st ed. 2009. |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-1-4419-0076-0 | ||
| 003 | DE-He213 | ||
| 005 | 20220120103933.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 130619s2009 xxu| s |||| 0|eng d | ||
| 020 | |a 9781441900760 |9 978-1-4419-0076-0 | ||
| 024 | 7 | |a 10.1007/978-1-4419-0076-0 |2 doi | |
| 050 | 4 | |a TK7800-8360 | |
| 072 | 7 | |a TJF |2 bicssc | |
| 072 | 7 | |a TEC008000 |2 bisacsh | |
| 072 | 7 | |a TJF |2 thema | |
| 082 | 0 | 4 | |a 621.381 |2 23 |
| 100 | 1 | |a Gupta, Tapan. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Copper Interconnect Technology |h [electronic resource] / |c by Tapan Gupta. |
| 250 | |a 1st ed. 2009. | ||
| 264 | 1 | |a New York, NY : |b Springer New York : |b Imprint: Springer, |c 2009. | |
| 300 | |a XIX, 423 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a Dielectric Materials -- Diffusion and Barrier Layers -- Pattern Generation -- Deposition Technologies of Materials for Cu-Interconnects -- The Copper Damascene Process and Chemical Mechanical Polishing -- Conduction and Electromigration -- Routing and Reliability. | |
| 520 | |a Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials now prevails in the international microelectronics industry. However, as the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology. | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Nanotechnology. | |
| 650 | 1 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Nanotechnology. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9781441901262 |
| 776 | 0 | 8 | |i Printed edition: |z 9781441900753 |
| 776 | 0 | 8 | |i Printed edition: |z 9781489985118 |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-1-4419-0076-0 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||