Nanoscaled Semiconductor-on-Insulator Structures and Devices

This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on "Nanoscaled Semiconductor-On-Insulator Structures and devices" held in the Tourist and Recreation Centre "Sudak" (Crimea, Ukraine) from 15 t...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Hall, S. (Editor ), Nazarov, A.N (Editor ), Lysenko, V.S (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2007.
Edición:1st ed. 2007.
Colección:NATO Science for Peace and Security Series B: Physics and Biophysics,
Temas:
Optical materials.
Nanotechnology.
Electrical engineering.
Electronics.
Optical Materials.
Electrical and Electronic Engineering.
Electronics and Microelectronics, Instrumentation.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Nanoscaled SOI Material and Device Technologies
  • Status and trends in SOI nanodevices
  • Non-Planar Devices for Nanoscale CMOS
  • High-? Dielectric Stacks for Nanoscaled SOI Devices
  • Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer
  • Fluorine -Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates
  • Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs
  • Physics of Novel Nanoscaled SemOI Devices
  • Integration of silicon Single-Electron Transistors Operating at Room Temperature
  • SiGe Nanodots in Electro-Optical SOI Devices
  • Nanowire Quantum Effects in Trigate SOI MOSFETs
  • Semiconductor Nanostructures and Devices
  • MuGFET CMOS Process with Midgap Gate Material
  • Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs
  • SiGeC HBTs: impact of C on Device Performance
  • Reliability and Characterization of Nanoscaled SOI Devices
  • Noise Research of Nanoscaled SOI Devices
  • Electrical Characterization and Special Properties of FINFET Structures
  • Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs
  • Investigation of Compressive Strain Effects Induced by STI and ESL
  • Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology
  • Theory and Modeling of Nanoscaled Devices
  • Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems
  • Electron Transport in Silicon-on-Insulator Nanodevices
  • All Quantum Simulation of Ultrathin SOI MOSFETs
  • Resonant Tunneling Devices on SOI Basis
  • Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
  • Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets.

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