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Zinc Oxide - A Material for Micro- and Optoelectronic Applications Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 /
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the la...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2005.
|
| Edición: | 1st ed. 2005. |
| Colección: | NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry ;
194 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
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| 245 | 1 | 0 | |a Zinc Oxide - A Material for Micro- and Optoelectronic Applications |h [electronic resource] : |b Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 / |c edited by Norbert H. Nickel, Evgenii Terukov. |
| 250 | |a 1st ed. 2005. | ||
| 264 | 1 | |a Dordrecht : |b Springer Netherlands : |b Imprint: Springer, |c 2005. | |
| 300 | |a XVI, 240 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 490 | 1 | |a NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry ; |v 194 | |
| 505 | 0 | |a ZnO Bulk and Layer Growth -- The Scope of Zinc Oxide Bulk Growth -- Growth Mechanism of ZnO Layers -- Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals -- Electrical, Optical, and Structural Properties -- Electrical Properties of ZnO -- Electrical Properties of ZnO Thin Films and Single Crystals -- Structure, Morphology, and Photoluminescence of ZnO Films -- Optics and Spectroscopy of Point Defects in ZnO -- Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals -- Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy -- Role of Hydrogen -- Muon Spin Rotation Measurements on Zinc Oxide -- Hydrogen Donors in Zinc Oxide -- Hydrogen-Related Defects in ZnO Studied by IR Absorption Spectroscopy -- Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide -- Fundamental Properties -- Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO -- Fundamental Optical Spectra and Electronic Structure of ZnO Crystals -- Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities -- Device Applications -- ZnO Window Layers for Solar Cells -- ZnO/AlGaN Ultraviolet Light Emitting Diodes -- ZnO Transparent Thin-Film Transistor Device Physics -- Zinc Oxide Thin-Film Transistors. | |
| 520 | |a Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications", held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. | ||
| 650 | 0 | |a Lasers. | |
| 650 | 1 | 4 | |a Laser. |
| 700 | 1 | |a Nickel, Norbert H. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
| 700 | 1 | |a Terukov, Evgenii. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
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| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9789048103324 |
| 776 | 0 | 8 | |i Printed edition: |z 9781402034732 |
| 776 | 0 | 8 | |i Printed edition: |z 9781402034749 |
| 830 | 0 | |a NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry ; |v 194 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/1-4020-3475-X |z Texto Completo |
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| 950 | |a Physics and Astronomy (SpringerNature-11651) | ||
| 950 | |a Physics and Astronomy (R0) (SpringerNature-43715) | ||