Quantum Dots: Fundamentals, Applications, and Frontiers Proceedings of the NATO ARW on Quantum Dots: Fundamentals, Applications and Frontiers, Crete, Greece 20 - 24 July 2003 /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Joyce, Bruce A. (Editor ), Kelires, Pantelis C. (Editor ), Naumovets, Anton G. (Editor ), Vvedensky, Dimitri (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2005.
Edición:1st ed. 2005.
Colección:NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry ; 190
Temas:
Optical materials.
Nanotechnology.
Surfaces (Technology).
Thin films.
Condensed matter.
Lasers.
Optical Materials.
Surfaces, Interfaces and Thin Film.
Condensed Matter Physics.
Laser.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Atomistic Processes during Quantum Dot Formation
  • Quantum Dots in the InAs/GaAs System
  • First-Principles Study of InAs/GaAs(001) Heteroepitaxy
  • Formation of Two-Dimensional Si/Ge Nanostructures Observed by STM
  • Diffusion, Nucleation and Growth on Metal Surfaces
  • The Stranski-Krastanov Transition
  • The Mechanism of the Stranski-Krastanov Transition
  • Off-Lattice KMC Simulations of Stranski-Krastanov-Like Growth
  • Temperature Regimes of Strain-Induced InAs Quantum Dot Formation
  • Kinetic Modelling of Strained Films: Effects of Wetting and Facetting
  • Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy
  • Self-Assembly of Quantum Dot Arrays
  • Lateral Organization of Quantum Dots on a Patterned Substrate
  • Some Thermodynamic Aspects of Self-Assembly of Quantum Dot Arrays
  • The Search for Materials with Self-Assembling Properties: The Case of Si-Based Nanostructures
  • Structure and Composition of Quantum Dots
  • X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dots
  • Carbon-Induced Ge Dots On Si(100): Interplay of Strain and Chemical Effects
  • Growth Information Carried by Reflection High-Energy Electron Diffraction
  • Electrons and Holes in Quantum Dots
  • Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxation
  • Quantum Dot Molecules and Chains
  • Collective Properties of Electrons and Holes in Coupled Quantum Dots
  • Phase Transitions in Wigner Molecules
  • Fast Control of Quantum States in Quantum Dots: Limits due to Decoherence
  • Optical Properties of Quantum Dots
  • Real SpaceAb Initio Calculations of Excitation Energies in Small Silicon Quantum Dots
  • GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties
  • Quantum Dots in High Electric Fields: Field and Photofield Emission from Ge Nanoclusters on Si(100)
  • Optical Emission Behavior of Si Quantum Dots
  • Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction.

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