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Materials Fundamentals of Gate Dielectrics
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, ther...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2005.
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| Edición: | 1st ed. 2005. |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Materials and Physical Properties of High-K Oxide Films
- Device Principles of High-K Dielectrics
- Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics
- Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces
- Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides
- Dielectric Properties of Simple and Complex Oxides from First Principles
- IVb Transition Metal Oxides and Silicates: An Ab Initio Study
- The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors
- Interfacial Properties of Epitaxial Oxide/Semiconductor Systems
- Functional Structures
- Mechanistic Studies of Dielectric Growth on Silicon
- Methodology for Development of High-? Stacked Gate Dielectrics on III-V Semiconductors.