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Fundamentals of Power Semiconductor Devices
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatme...
| Cote: | Libro Electrónico |
|---|---|
| Auteur principal: | |
| Collectivité auteur: | |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
New York, NY :
Springer US : Imprint: Springer,
2008.
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| Édition: | 1st ed. 2008. |
| Sujets: | |
| Accès en ligne: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-0-387-47314-7 | ||
| 003 | DE-He213 | ||
| 005 | 20220203121438.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100715s2008 xxu| s |||| 0|eng d | ||
| 020 | |a 9780387473147 |9 978-0-387-47314-7 | ||
| 024 | 7 | |a 10.1007/978-0-387-47314-7 |2 doi | |
| 050 | 4 | |a TK7800-8360 | |
| 072 | 7 | |a TJF |2 bicssc | |
| 072 | 7 | |a TEC008000 |2 bisacsh | |
| 072 | 7 | |a TJF |2 thema | |
| 082 | 0 | 4 | |a 621.381 |2 23 |
| 100 | 1 | |a Baliga, B. Jayant. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Fundamentals of Power Semiconductor Devices |h [electronic resource] / |c by B. Jayant Baliga. |
| 250 | |a 1st ed. 2008. | ||
| 264 | 1 | |a New York, NY : |b Springer US : |b Imprint: Springer, |c 2008. | |
| 300 | |a XXIV, 1072 p. 450 illus. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Thyristors -- Synopsis. | |
| 520 | |a Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses: Numerical simulation examples to elucidate the operating physics and validate the models Device performance attributes that allow practicing engineers in the industry to develop products Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures. | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Electric power production. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 0 | |a Spectrum analysis. | |
| 650 | 1 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Electrical Power Engineering. |
| 650 | 2 | 4 | |a Mechanical Power Engineering. |
| 650 | 2 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 650 | 2 | 4 | |a Spectroscopy. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9780387564401 |
| 776 | 0 | 8 | |i Printed edition: |z 9780387473130 |
| 776 | 0 | 8 | |i Printed edition: |z 9781489977656 |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-0-387-47314-7 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||