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Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermor...
| Call Number: | Libro Electrónico |
|---|---|
| Main Authors: | , , |
| Corporate Author: | |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
New York, NY :
Springer US : Imprint: Springer,
2005.
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| Edition: | 1st ed. 2005. |
| Series: | The Springer International Series in Engineering and Computer Science ;
851 |
| Subjects: | |
| Online Access: | Texto Completo |
Table of Contents:
- Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book
- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions
- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions
- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions
- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions
- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions
- Conclusions, Future Work and Outlook. Conclusions. Future work
- Outlook.