Cargando…

Matching Properties of Deep Sub-Micron MOS Transistors

Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermor...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Croon, Jeroen A. (Autor), Sansen, Willy M. (Autor), Maes, Herman E. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York, NY : Springer US : Imprint: Springer, 2005.
Edición:1st ed. 2005.
Colección:The Springer International Series in Engineering and Computer Science ; 851
Temas:
Acceso en línea:Texto Completo

MARC

LEADER 00000nam a22000005i 4500
001 978-0-387-24313-9
003 DE-He213
005 20220114222027.0
007 cr nn 008mamaa
008 100301s2005 xxu| s |||| 0|eng d
020 |a 9780387243139  |9 978-0-387-24313-9 
024 7 |a 10.1007/b105122  |2 doi 
050 4 |a TK7867-7867.5 
072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
072 7 |a TJFC  |2 thema 
082 0 4 |a 621.3815  |2 23 
100 1 |a Croon, Jeroen A.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
245 1 0 |a Matching Properties of Deep Sub-Micron MOS Transistors  |h [electronic resource] /  |c by Jeroen A. Croon, Willy M Sansen, Herman E. Maes. 
250 |a 1st ed. 2005. 
264 1 |a New York, NY :  |b Springer US :  |b Imprint: Springer,  |c 2005. 
300 |a XII, 206 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a The Springer International Series in Engineering and Computer Science ;  |v 851 
505 0 |a Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook. 
520 |a Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET. 
650 0 |a Electronic circuits. 
650 0 |a Physics. 
650 0 |a Astronomy. 
650 0 |a Electronics. 
650 0 |a Engineering. 
650 0 |a Electrical engineering. 
650 1 4 |a Electronic Circuits and Systems. 
650 2 4 |a Physics and Astronomy. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Technology and Engineering. 
650 2 4 |a Electrical and Electronic Engineering. 
700 1 |a Sansen, Willy M.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
700 1 |a Maes, Herman E.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer Nature eBook 
776 0 8 |i Printed edition:  |z 9781441937186 
776 0 8 |i Printed edition:  |z 9780387504803 
776 0 8 |i Printed edition:  |z 9780387243146 
830 0 |a The Springer International Series in Engineering and Computer Science ;  |v 851 
856 4 0 |u https://doi.uam.elogim.com/10.1007/b105122  |z Texto Completo 
912 |a ZDB-2-ENG 
912 |a ZDB-2-SXE 
950 |a Engineering (SpringerNature-11647) 
950 |a Engineering (R0) (SpringerNature-43712)