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High-Linearity CMOS RF Front-End Circuits

The rapidly growing wireless communication industry is increasingly demanding CMOS RF ICs due to their lower costs and higher integration levels. The RF front-end of such wireless systems often needs to handle widely disparate signal levels: small desired signals and large interferers. Therefore, it...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Ding, Yongwang (Autor), Harjani, Ramesh (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York, NY : Springer US : Imprint: Springer, 2005.
Edición:1st ed. 2005.
Temas:
Acceso en línea:Texto Completo

MARC

LEADER 00000nam a22000005i 4500
001 978-0-387-23802-9
003 DE-He213
005 20220117053227.0
007 cr nn 008mamaa
008 100301s2005 xxu| s |||| 0|eng d
020 |a 9780387238029  |9 978-0-387-23802-9 
024 7 |a 10.1007/b102361  |2 doi 
050 4 |a T1-995 
072 7 |a TBC  |2 bicssc 
072 7 |a TEC000000  |2 bisacsh 
072 7 |a TBC  |2 thema 
082 0 4 |a 620  |2 23 
100 1 |a Ding, Yongwang.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
245 1 0 |a High-Linearity CMOS RF Front-End Circuits  |h [electronic resource] /  |c by Yongwang Ding, Ramesh Harjani. 
250 |a 1st ed. 2005. 
264 1 |a New York, NY :  |b Springer US :  |b Imprint: Springer,  |c 2005. 
300 |a XVI, 128 p. 25 illus.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a RF Devices in CMOS Process -- Linear Transconductors in CMOS -- Linearization with Harmonic Cancellation -- LNA Design in CMOS -- Down-Conversion Mixer Design in CMOS -- Power Amplifier Design in CMOS -- Conclusions. 
520 |a The rapidly growing wireless communication industry is increasingly demanding CMOS RF ICs due to their lower costs and higher integration levels. The RF front-end of such wireless systems often needs to handle widely disparate signal levels: small desired signals and large interferers. Therefore, it becomes necessary to have highly linear circuits to increase the system dynamic range. However, traditional CMOS circuit designs are usually limited in either their speed or in their linear performance. New techniques are needed to meet the demand for high linearity at radio frequencies. High-Linearity CMOS RF Front-End Circuits presents some unique techniques to enhance the linearity of both the receiver and transmitter. For example, using harmonic cancellation techniques, the linearity of the receiver front-end can be increased by few tens of dB with only minimal impact on the other circuit parameters. The new parallel class A&B power amplifier can not only increase the transmitter's output power in the linear range, but can also result in significant savings in power consumption. High-Linearity CMOS RF Front-End Circuits can be used as a textbook for graduate courses in RF CMOS design and will also be useful as a reference for the practicing engineer. 
650 0 |a Engineering. 
650 1 4 |a Technology and Engineering. 
700 1 |a Harjani, Ramesh.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer Nature eBook 
776 0 8 |i Printed edition:  |z 9781441936639 
776 0 8 |i Printed edition:  |z 9780387503790 
776 0 8 |i Printed edition:  |z 9780387238012 
856 4 0 |u https://doi.uam.elogim.com/10.1007/b102361  |z Texto Completo 
912 |a ZDB-2-ENG 
912 |a ZDB-2-SXE 
950 |a Engineering (SpringerNature-11647) 
950 |a Engineering (R0) (SpringerNature-43712)